Embedded single crystal diamond(s) in a polycrystalline diamond structure and a method of growing it

ABSTRACT

A method of a growing an embedded single crystal diamond structure, comprising: disposing a single crystal diamond on a non-diamond substrate, wherein the non-diamond substrate is larger than the single crystal diamond; masking a top portion of the single crystal diamond using a masking material; and using a chemical vapor deposition (CVD) growth chamber, growing polycrystalline diamond material surrounding the single crystal diamond in order to join the single crystal diamond to the polycrystalline diamond material.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a United State National Stage entry under 35 U.S.C.§ 371 of International Application No. PCT/SG2018/000006 filed on Nov.2, 2018, designating the United States of America and published inEnglish on May 9, 2019, which in turn claims priority to SingaporeApplication No. 10201709086Q, filed on Nov. 3, 2017, all of which areincorporated herein by references in in their entirety.

This application is a division and claims the benefits of U.S.non-Provisional Application No. 16/761,234, (Attorney Docket IIA-2001),filed on May 1, 2020, entitled “Embedded Single Crystal Diamond(S) In APolycrystalline Diamond Structure And A Method Of Growing It”, thecontents of which is incorporated herein by references in its entirely.

FIELD OF INVENTION

The present invention relates to single crystal diamond embedded inpolycrystalline diamond and a method of growing it.

BACKGROUND

Diamonds are well known for its unparalleled physical, optical andelectrical properties. Advances in diamond growth technologies such aschemical vapour deposition (CVD) and high-pressure and high-temperature(HPHT) has enabled obtainment of diamonds with desired, controllable andreproducible properties.

Generally, diamonds grown using the abovementioned growth technologiescan be a monocrystalline diamond (i.e., a single crystal diamond) or apolycrystalline diamond (i.e., a multi-grain diamond). In mostinstances, the single crystal diamond have significantly betterproperties than a polycrystalline diamond. However, adopting fully tosingle crystal diamonds in all fathomable applications have beencurtailed mostly by two problems, i.e., industrial scalability andhandling feasibility. Hence, in such cases, the polycrystalline diamondand/or other alternative materials seem to have dominated and continuedto be favorable.

Take for example a material choice for a bare/unprocessed wafer. Thesuperior qualities of a single crystal diamond would always make it apreferable choice material for a wafer, in which electronic circuits canbe formed. However, up to this date, diamond growth industry is unableto form a sufficiently large single crystal diamond in order to make aviable industrial option to replace other commonly used materials (e.g.,silicon).

Another example is handling feasibility of a thin-film single crystaldiamond. The superior properties of the thin-film single crystal diamondis highly appreciated in a radiation detector specifically forradioactive therapy treatment, which is being developed to fightdiseases such as cancer. The radiation detector is utilized to transmitproton to a selected area (e.g., targeted cells on the body, etc.). Suchprecision is only enabled because of the superior properties of thesingle crystal diamond as a transmission channel for the protons withoutdampening or affecting the protons trajectory. However, the thin-filmsingle crystal diamonds are usually brittle and may easily cleavewhenever being handled.

Therefore, it is the object of this invention to resolve theabove-mentioned challenges faced by the single crystal diamond.

SUMMARY

A summary of certain embodiments disclosed herein is set forth below. Itshould be understood that these aspects are presented merely to providethe reader with a brief summary of these certain embodiments and thatthese aspects are not intended to limit the scope of this disclosure.Indeed, this disclosure may encompass a variety of aspects that may notbe set forth below.

In one embodiment, a method of growing an embedded single crystaldiamond structure is provided. The method includes a step to dispose asingle crystal diamond on a non-diamond substrate, wherein thenon-diamond substrate is larger than the single crystal diamond. Themethod further includes a step to mask a top portion of the singlecrystal diamond using a masking material. Finally, the method includes astep to grow polycrystalline diamond material surrounding the singlecrystal diamond in order to join the single crystal diamond to thepolycrystalline diamond using a chemical vapor deposition (CVD) growthmethod.

In another embodiment, the method stated in the above embodiment maygrow an embedded single crystal diamond structure. The embedded singlecrystal diamond structure includes a single crystal diamond and apolycrystalline diamond. The polycrystalline diamond surrounds thesingle crystal diamond, wherein the single crystal diamond is disposedin such manner as to be suspended between the polycrystalline diamond.

Various refinements of the features noted above may exist in relation tovarious aspects of the present disclosure. Further features may also beincorporated in these various aspects as well. These refinements andadditional features may exist individually or in any combination. Forinstance, various features discussed below in relation to one or more ofthe illustrated embodiments may be incorporated into any of theabove-described aspects of the present invention alone or in anycombination. Again, the brief summary presented above is intended onlyto familiarize the reader with certain aspects and contexts ofembodiments of the present disclosure without limitation to the claimedsubject matter.

BRIEF DESCRIPTION OF DRAWINGS

Various aspects of this disclosure may be better understood upon readingthe following detailed description and upon reference to the drawings inwhich:

FIGS. 1A and 1B show an illustrative embedded single crystal diamondstructure in accordance with one embodiment of the present invention.

FIGS. 2A, 2B and 2C show illustrative different formation stages of theembedded single crystal diamond structure of FIGS. 1A and 1B inaccordance with one embodiment of the present invention.

FIG. 3 shows an illustrative single crystal diamond array in apolycrystalline frame in accordance with one embodiment of the presentinvention.

FIG. 4 shows an illustrative method of growing an embedded singlecrystal diamond structure in accordance with one embodiment of thepresent invention.

DETAILED DESCRIPTION

One or more specific embodiments will be described below. In an effortto provide a concise description of these embodiments, not all featuresof an actual implementation are described in the specification. Itshould be appreciated that in the development of any such actualimplementation, numerous implementation-specific decisions must be madeto achieve the specific goals of diamond growths, which may vary fromone implementation to another. Moreover, it should be appreciated thatsuch efforts might be complex and time consuming, but would neverthelessbe a routine undertaking of those of ordinary skill having the benefitof this disclosure.

As discussed in further details below, embodiments of the presentdisclosure relate generally to an embedded single crystal diamond in apolycrystalline diamond frame. Indeed, such an embedded single crystaldiamond may be utilized in multiple applications such as:

-   Mechanical applications such as viewing windows in abrasive    atmosphere, cutting, and wear applications.-   Optical applications such as etalon, laser window, optical    reflectors, diffractive optical elements, anvil etc.-   Electronic applications such as detectors, heat spreaders, high    power switches at power stations, high-frequency field-effect    transistors and light-emitting diodes, etc.-   Microwave applications such as window-gyrotron, microwave    components, antenna,-   Acoustic applications such as surface acoustic wave (SAW) filter,-   Aesthetic applications such as gemstones,-   and many other applications.

FIGS. 1A and 1B, meant to be illustrative and not limiting, illustratesan embedded single crystal diamond structure. FIGS. 1A and 1B illustratetop and side views, respectively, of embedded single crystal diamondstructure 130.

The embedded single crystal diamond structure 130 includes singlecrystal diamond 110 and polycrystalline diamond material 120. As shownin FIG. 1A, the polycrystalline diamond material 120 fully surroundsperipheral edges of single crystal diamond 110.

The embedded single crystal diamond structure 130 can be used in avariety of applications. Specifically, embedded single crystal diamondstructure 130 can be used in optical, detector, semiconductor and/orelectronic fields as per the provided abovementioned list.

In addition to that, embedded single crystal diamond structure 130 mayalso overcome the challenges described in the background, in oneembodiment. However, without deviating from the general inventiveconcept of the invention, it should be appreciated that not everyvariation of claimed inventions is capable of overcoming the problemsdescribed in the background.

In one embodiment, embedded single crystal diamond structure 130 may notcleave even when single crystal diamond 110 is a thin-film singlecrystal diamond having a thickness of less than 20 microns. Theapparatus/machine (e.g., a detector in a radioactive therapyapplication) may hold onto the thick portion of embedded single crystaldiamond structure 130 (i.e., polycrystalline diamond material 120) andtherefore overcome the handling feasibility problem.

In one embodiment, single crystal diamond 110 may be a mined diamond ora grown diamond. The grown diamond can be grown using a chemical vapordeposition (CVD) growth process or a high pressure high temperature(HPHT) growth process. The CVD growth process is preferred to obtain aconsistently pure diamond.

Furthermore, single crystal diamond 110 can also form a semiconductor.In one exemplary embodiment, single crystal diamond 110 forms into asemiconductor by implanting specific types of dopants (e.g., boron,etc.). It should be appreciated that upon doping, single crystal diamond110 may also be referred to as a doped single crystal diamond 110 (e.g.,a boron doped single crystal diamond). Doping single crystal diamond 110with specific types of dopants may form a semiconducting material suchas negative type (N-type), positive type (P-type) and/or N+P types.

In addition to that, single crystal diamond 110 can also be anisotopically pure diamond or isotopically enriched diamond. In oneembodiment, single crystal diamond 110 may be an isotopically enrichedor pure diamond having either 13C or 12C.

Referring still to FIG. 1A, single crystal diamond 110 may have its twoorthogonal lengths with dimensions of X1 and Y1. In one embodiment, thevalues of X1 and Y1 may be 1 millimeter (mm) and 1 mm, respectively. Insuch embodiment, an area encompassed by a surface of single crystaldiamond 110 is 1 mm2. In another embodiment, the values of X1 and Y1 maybe 2 mm and 2 mm, respectively. In such embodiment, an area encompassedby a surface of single crystal diamond 110 is 4 mm2. Generally, the sizeof an area is highly dependable on the applications in which singlecrystal diamond 110 will be utilized. For example, a radiation therapyapplication apparatus would require single crystal diamond 110 having asize of at least 1 mm2. In another example, a semiconductor applicationwould require single crystal diamond 110 having a size of at least 4mm2.

Now referring to FIG. 1B, thickness of single crystal diamond 110 isrepresented by dimension Z1. A person skilled in the art appreciatesthat thickness of single crystal diamond 110 may vary with theapplications of embedded single crystal diamond structure 130. In oneexemplary embodiment, the value of Z1 may be 20 microns (µm). In theradioactive therapy application as stated previously, where thin-filmsingle crystal diamonds are desired, the value of Z1 may be 2 µm orless. In another exemplary embodiment, in the applications where thicksingle crystal diamonds are preferred, the value of Z1 are in terms ofmillimeters (e.g., greater than 0.2 mm).

Single crystal diamond 110 may be a relatively pure diamond. In oneembodiment, such pure single crystal diamond 110 may have one or more ofthese listed characteristics:

-   a) Single substitutional nitrogen (Ns) < 1 part per billion (ppb);-   b) Thermal conductivity > 1500 Watts per meter per Kelvin (Wm ⁻¹K⁻¹)    at 300 K;-   c) Charge collection distance, when measured using Alpha and Beta    sources, having a full collection > 0.1 Voltage per each micron    (V/µm) ;-   d) Charge collection efficiency is 100% > 0.1 V/µm;-   e) Carrier lifetime for electrons at 300 K is > 21.4 +/- 5.5    nanoseconds (ns);-   f) Carrier lifetime for holes at 300 K is > 25.65 +/- 1.3 ns;-   g) Birefringence of less than Δn < 1 × 10⁻⁴;-   h) Optical transmission between 70% to 71%, at 10.6 µm; and/or-   i) Rocking curve width of > 7 µRad.

It should be appreciated that the required characteristic of singlecrystal diamond 110 depends on its application. For example, in thesemiconductor applications, it is preferable to have almost all of theabove mentioned characteristics (i.e., characteristics (a) - (i)).Alternatively, in the optical applications, it is preferable to have atleast have a portion of the above mentioned characteristics (e.g.,characteristics (g)-(h)).

Single crystal diamond 110 may be in a form of a plate. The plate may bea parallel-sided plate. In one embodiment, the plate may have sixsurfaces. In such embodiment, the top and bottom surfaces of singlecrystal diamond 110 is of crystallographic orientations (100) and theside surfaces of single crystal diamond 110 is of crystallographicorientations (110). In another exemplary embodiment, where the plate mayalso have six surfaces but will all the surfaces having crystallographicorientations (100). In another exemplary embodiment, where the plate mayalso have six surfaces but will all top and bottom surfaces havingcrystallographic orientations (111) and the side surfaces of any othercrystallographic orientations (111, 110, 100, etc.).

Referring still to FIGS. 1A and 1B, polycrystalline diamond material 120surrounds entire peripheral edge of single crystal diamond 110.Dimensions of polycrystalline diamond material 120 formed from edges ofsingle crystal diamond 110 may be represented by X2 and Y2. In oneembodiment, the value of X2 may be more than 0.5 mm. The values of X2and Y2 can be increased depending on the applications. For example,applications that require bigger surface of polycrystalline to enableeasier handling, would have large X2 and Y2 values. It should be notedthat in the embodiments where single crystal diamond 110 is having onlya small area (e.g., dimensions of X1 and Y1 of 10 µm and 10 µm,respectively, or less), the values of X2 and Y2 may still remain 0.5 mmand 0.5 mm, respectively, or more. The purpose to maintain the X2 and Y2values is to provide sufficient are for easier handling.

Notwithstanding the embodiment described in FIGS. 1A and 1B,polycrystalline diamond material 120 may also be formed to surround onlya portion of selected peripheral edges of single crystal diamond 110. Inother words, polycrystalline diamond material 120 may not be surroundingthe entire peripheral edge of single crystal diamond 110. The purpose tosurround polycrystalline diamond material 120 around selected peripheraledges of single crystal diamond 110 is to do bare minimum whileproviding sufficient structural holding support and handling area.

FIG. 1B also shows thickness of polycrystalline diamond material 120. Asshown in FIG. 1B, the thickness of single crystal diamond 110 is similarto polycrystalline diamond material 120 (i.e., Z1) with the exception ofsides that are closest to single crystal diamond 110, in one embodiment.Further elaboration on the reasons in which the sides of polycrystallinediamond material 120 differ in thickness than bulk polycrystallinediamond material 120 will be provided through FIGS. 2A-2C. Nevertheless,in one embodiment, such uneven thickness along polycrystalline diamondmaterial 120 can be avoided using an additional polishing process and/oretching process.

It should be appreciated that thickness of polycrystalline diamondmaterial 120 may be fixed whereas thickness of single crystal diamond110 depends on the application. For example, a thickness of singlecrystal diamond 110 and polycrystalline diamond material 120 may besimilar when single crystal diamond 110 is having a thickness of morethan 200 µm. However, in the embodiments where the thickness of singlecrystal diamond 110 is relatively small (e.g., in the case of thin-filmsingle crystal diamond that has a thickness of 2 µm), then the thicknessof polycrystalline diamond material 120 and single crystal diamond 110will differ. In such embodiments, the thickness of polycrystallinediamond material 120 will still remain more than 200 µm. In suchsituation, embedded single crystal diamond structure 130 may have unevensurface. In one embodiment, such uneven surface may be similar to a“valley-like” surface whereby the thin-film single crystal diamond 110forms the base of the valley. In another embodiment, single crystaldiamond 110 may be suspended mid-way through the thickness ofpolycrystalline diamond material 120 and form a structure that issimilar to a “dumbbell” structure. The thickness of polycrystallinediamond material 120 remains the same in order to enable easy-handlingof such thin-film single crystal diamond 110.

In one embodiment, the purity level of polycrystalline diamond material120 may be similar to single crystal diamond 110. In an embodiment wheresingle crystal diamond 110 is having a highest purity level singlecrystal diamond (i.e., having all the above-mentioned characteristics(a) - (i)), the purity level of polycrystalline diamond material 120ought to be also somewhat near to the purity level of single crystaldiamond 110. Similar purity levels of single crystal diamond 110 andpolycrystalline diamond material 120 ensures that there is no mismatchin the properties between two different materials, which has generallyplayed a limiting role in post-processing steps. In one embodiment, thesimilarities in the purity levels may enable mechanical polishing of theentire top or bottom surface of embedded single crystal diamond 130. Inan alternative embodiment, the similar purity level may also enablefurther formation of other structures without large characteristicmismatches between single crystal diamond 110 and polycrystallinediamond material 120.

In one embodiment, characteristics of polycrystalline diamond material120 may be similar to a polycrystalline diamond used for opticalapplications. The characteristics may include Fourier-transform infraredspectroscopy (FTIR) values at 10.6 µm of at least 70%.

The joint at the boundary of the single crystal diamond 110 andpolycrystalline diamond material 120 is seamless and almost non-visible.Furthermore, the boundary between single crystal diamond 110 andpolycrystalline diamond material 120 is also non-porous. A Raman FWHMwas measured at room temperature using 514 nanometer (nm) laser alongthe seamless and almost non-visible boundary. In one embodiment, theRaman FWHM for single crystal diamond 110 near the boundary is 2 cm-1and for polycrystalline diamond material is 2.5 cm-1. Each of thesevalues indicate a well-defined, seamless and almost non-visibletransition between single crystal diamond 110 and polycrystallinediamond 120. Hence, such perfect transition may enable usage of theembedded single crystal diamond structure 130 in any vacuum compatibleapplications (e.g., optical window for a detector).

It should be appreciated that the polycrystalline diamond material maybe described as a form of diamond material made up of randomly orientedcrystallites and containing large-angle grain boundaries, twinboundaries, or both. In contrast, single crystal diamond material is amaterial in which the crystal lattice of the diamond is continuous andunbroken to the edges of the sample, with no grain boundaries.

In one embodiment, a method of a growing an embedded single crystaldiamond structure is provided. The method includes a step to dispose asingle crystal diamond on a non-diamond substrate, wherein thenon-diamond substrate is larger than the single crystal diamond. Themethod further includes a step to mask a top portion of the singlecrystal diamond using a masking material. Finally, the method includes astep to grow polycrystalline diamond material surrounding the singlecrystal diamond in order to join the single crystal diamond to thepolycrystalline diamond using a chemical vapor deposition (CVD) growthmethod.

FIGS. 2A - 2C, meant to be illustrative and not limiting, showsformation stages 200A, 200B and 200C, respectively, when growing anembedded single crystal diamond structure in accordance with oneembodiment of the present invention. The embedded single crystal diamondstructure in FIGS. 2A - 2C may be similar to embedded single crystaldiamond structure 130 of FIGS. 1A and 1B, in one embodiment.

FIG. 2A, meant to be illustrative and not limiting, an initial formationstage of an embedded single crystal diamond structure in accordance withone embodiment of the present invention. The initial formation stage200A includes a stacked structure made from non-diamond substrate 220,single crystal diamond 230, frame structure 240 and masking material250. This structure is further placed on a substrate holder 210 of a CVDgrowth chamber.

As shown in FIG. 2A, single crystal diamond 230 is disposed on top ofnon-diamond substrate 220. In one embodiment, non-diamond substrate 220may be silicon, silicon carbide (SiC), tungsten, and/or any othersuitable material. Non-diamond substrate 220 is used as a base for thegrowth of polycrystalline diamond. In one embodiment, single crystaldiamond 230 position relative to non-diamond substrate 220 may be assuch so as to address the handling issue and/or formation of arrayissue. FIG. 2A shows single crystal diamond 230 is placed substantiallycentral of non-diamond substrate 220. The central placement may enablepolycrystalline diamond material growth surrounding single crystaldiamond 230. Alternatively, single crystal diamond 230 is placed on theedge of non-diamond substrate 220. Such placement will enable growth ofthe polycrystalline diamond material on one or more edges of singlecrystal diamond 230, similar to as described in FIGS. 1A and 1B.

Single crystal diamond 230 may be in a form of a plate. The plate may bea parallel-sided plate. Each of these plates may have six surface. Inone embodiment, top and bottom surfaces of single crystal diamond 230 isof (100) crystallographic orientations and side surfaces of singlecrystal diamond 230 have (110) crystallographic orientations.

Referring still to FIG. 2A, frame structure 240 surrounds peripheraledges of single crystal diamond 230. Frame structure 240 may be utilizedfor preventing any polycrystalline growth on single crystal diamond 230.

In another embodiment, the frame structure 240 may surround only aportion of an area of the single crystal diamond that should abstainfrom any polycrystalline diamond growth. In such embodiment, the singlecrystal diamond that is outside frame structure 240 would grow diamondwhereas single crystal diamond 230 that is within frame structure 240would not. Frame structure 240 may be composed from a diamond materialor a silicon material. It should be appreciated that frame structure 240may be similar to a wall structure although in FIGS. 2A - 2B, framestructure 240 seems like two stand-alone pillars.

Disposed above the frame structure 240 is masking material 250. As shownin FIG. 2A, masking material 250 is fully covering the top surface ofsingle crystal diamond 230. Masking material 250, as the name suggests,is used to isolate an area on single crystal diamond 230 from anygrowth. Masking material 250 blocks the growth by disabling the gas orplasma to reach a surface of single crystal diamond 230. Hence, therewill not be any growth in the area that is surrounded by frame structure240 and blocked by the masking material. In one embodiment, the maskingmaterial 250 may be composed from silicon carbide.

As stated above, the structure in initial formation stage 200A isdisposed above substrate holder 210. The substrate holder 210 isgenerally a substrate used for CVD growth process. In one embodiment,substrate holder 210 is a molybdenum (Mo) and does not include anyintentional placement of diamond seed or diamond nucleation site toenable the polycrystalline diamond material growth.

FIG. 2B, meant to be illustrative and not limiting, shows post-growthformation stage 200B immediately after a growth state in accordance withone embodiment of the present invention. In one embodiment, the onlydifference between initial formation stage 200A of FIG. 2A andpost-growth formation stage 200B of FIG. 2B is a layer ofpolycrystalline diamond 260. Polycrystalline diamond 260 is grown usinga polycrystalline diamond growth process. It is clearly seen from theFIG. 2B that polycrystalline diamond 260 is disposed immediately abovethe exposed-to-plasma area of non-diamond substrate 220, single crystaldiamond 230, frame structure 230 and masking material 250. In oneembodiment, the growth process may be sufficiently a long process thatgrows polycrystalline diamond 260 having a thickness of at least 1 -2mm.

In one embodiment, the growth process of polycrystalline diamond usingthe CVD method may include supplying a gas having at least 0.5% to 10 %of methane (CH4) in hydrogen in to a CVD growth chamber. The growthconditions are to be at least in the range of 750 degree Celsius to 1250degree Celsius. The pressure conditions are in a range of 100 kiloPascal(KPA) to 300 KPa.

FIG. 2C, meant to be illustrative and not limiting, illustrates a finalformation stage of forming the embedded single crystal diamondstructure. In one embodiment, final formation stage 200C may be similarto embedded single crystal diamond structure 130 of FIGS. 1A and 1B.Final formation stage 200C may be achieved by removing the non-diamondsubstrate from the bottom of single crystal diamond 230 and by removingframe structure 240 and masking material 250. It should be appreciatedthat the non-diamond substrate, frame structure 240 and masking material250 may be easily removed as they merely get detached after the growthof the polycrystalline diamond material 260.

As shown in FIG. 2C, thickness of the sides of polycrystalline diamondmaterial 260 near to single crystal diamond 230 differ than thethickness of the remaining portion of polycrystalline diamond material260. The uneven thickness of polycrystalline diamond material 260 occursbecause of the manner in which frame structure 230 is placed for the CVDgrowth process. The post-growth formation stage 200B shows that growthof polycrystalline diamond material following the contour of framestructure 230 at the edges of single crystal diamond 230. Hence, uponremoval of frame structure 240 and masking material 250, the sides ofpolycrystalline diamond material 260 near single crystal diamond 230would be relatively thicker.

Nevertheless, the uneven thickness of polycrystalline diamond material260 can be evened out by way of polishing (i.e., mechanical polishing)if the embedded single crystal diamond material is relatively thick, inone embodiment. Alternatively, the uneven thickness of polycrystallinediamond material 260 can be evened out by way of etching (i.e., reactiveion etching (RIE)) if the single crystal diamond 230 is relatively thin.In one embodiment, when the evening process is performed only to theextent of the removing uneven thickness of polycrystalline diamondmaterial 260 without directly or indirectly impacting remaining surfacearea of polycrystalline diamond material 260 and single crystal diamond230, then the surface roughness of top surface of polycrystallinediamond material 260 at now evened out part may be different than theremaining surface are of polycrystalline diamond material 260.

FIG. 3 , meant to be illustrative and not limiting, illustrates a singlecrystal diamond array in a polycrystalline diamond frame in accordancewith one embodiment of the present invention. Single crystal diamondarray 300 includes six single crystal diamonds 320A-320F affixed in apolycrystalline frame 310. In one embodiment, single crystal diamondarray 300 may include at least more than one single crystal diamonds.The quality of single crystal diamonds 320A-320F may be similar, in oneembodiment. Alternatively, and depending on the application, the quality(e.g., size, thickness, origin (e.g., mined or grown), type (e.g., Ia,Ib, IIa or IIb), purity, colour, material, dopants) of single crystaldiamonds 320A-320F may be different.

Method of forming single crystal diamond array 300 is similar to methodof forming embedded single crystal diamond 130 of FIGS. 1A and 1B andembedded single crystal diamond structure as shown in FIGS. 2A-2C. Theonly difference would be tiling up of single crystal diamonds 320A-320Fprior to the growth of polycrystalline 310. In one embodiment, thesingle crystal diamonds 320A-320F may be arranged at precise locationson the non-diamond substrate and enable growth to connect these singlecrystal diamonds to be connected.

In one embodiment, embedded single crystal diamond structure 130 allowsformation of an array of single crystal diamonds. It should beappreciated that there are many applications of such array. In oneembodiment, the single crystal diamond array can be used as individualsubstrate that can be formed in to electronic circuitry undergoing asingle stream of process rather than each individual substrateindividually undergoing the stream of process. In addition to that, thearray of single crystal diamond array also assists to formulateredundancies in a detector. Hence, with such redundancies, if the singlecrystal diamond is somewhat damage, another single crystal can beswitched to replace the damage the single crystal diamond.

FIG. 4 , meant to be illustrative and not limiting, illustrates aflowchart for a method of growing an embedded single crystal diamondstructure in accordance with one embodiment of the present invention.The embedded single crystal diamond structure may be similar to embeddedsingle crystal diamond structure 130 of FIGS. 1A and 1B or embeddedsingle crystal diamond structure shown by final formation stage 200C ofFIG. 2C.

At step 410, a single crystal diamond is disposed on a non-diamondsubstrate. In one embodiment, the single crystal diamond and thenon-diamond substrate may be similar single crystal diamond 230 andnon-diamond substrate 220 of FIGS. 2A-2C.

At step 420, a top portion of the single crystal diamond is masked usinga masking material. In one embodiment, the masking material may besimilar to frame structure 240 and masking material 250 of FIGS. 2A and2B. The masking material may be provided only a selected area of thesingle crystal diamond. The configuration after step 420 may be similarto initial formation stage 200A as shown in FIG. 2A.

At step 430, polycrystalline diamond material is grown surrounding thesingle crystal diamond. Such growth of the polycrystalline diamondmaterial joins the single crystal diamond to the polycrystallinediamond. The process of growth may be using a CVD growth method asprovided in embodiment of FIG. 2B. Furthermore, the outcome immediatelyafter step 430 may be similar to post-growth formation stage 200B ofFIG. 2B.

At step 440, the masking material and non-diamond substrate are etchedaway from the embedded single crystal diamond. In one exemplaryembodiment, the outcome immediately after step 440 may be similar tofinal formation stage 200C of FIG. 2C.

Optionally, at step 450, the single crystal diamond that is embeddedwithin the embedded single crystal diamond can be etched to reduce itsthickness. The etching can be performed using RIE, in one embodiment.The capability to thin down is essential for the purposes of forming athin-film diamond with thickness of less than 20 µm and at the same timefeasible to be handled. In one embodiment, the final structuresubsequent to thinning may be similar to the “valley-like” surface or adumbbell like structure.

It is apparent to a person skilled in the art that many modifications,alternatives and variations may be made to the preferred embodiment ofthe present invention as described above without departing from thespirit and scope of the present invention. Accordingly, it is intendedto embrace all such modifications, alternatives and variations that fallwithin the scope of the included claims.

Reference to any prior art in the specification is not, and should notbe taken as, an acknowledgment or any form of suggestion that this priorart forms part of the common general knowledge.

Many modifications may be made to the preferred embodiment of thepresent invention as described above without departing from the spiritand scope of the present invention.

It will be understood that the term “comprises” or its grammaticalvariants as used in this specification and claims is equivalent to theterm “includes” and is not to be taken as excluding the presence ofother features or elements.

In one embodiment, a method of a growing an embedded single crystaldiamond structure, comprising:

-   disposing a single crystal diamond on a non-diamond substrate,    wherein the non-diamond substrate is larger than the single crystal    diamond;-   masking a top portion of the single crystal diamond using a masking    material; and-   using a chemical vapor deposition (CVD) growth chamber, growing    polycrystalline diamond material surrounding the single crystal    diamond in order to join the single crystal diamond to the    polycrystalline diamond material.

The abovementioned method further comprising:

-   etching the masking material and the non-diamond substrate from the    embedded single crystal diamond structure.

The abovementioned method further comprising:

-   further reducing a thickness of the single crystal diamond that is    embedded in the embedded diamond single crystal structure.

The abovementioned method, wherein the non-diamond substrate is asilicon substrate.

The abovementioned method, the masking of the top portion of the singlecrystal diamond further comprises:

-   disposing a frame structure on the top portion of the single crystal    diamond, wherein the frame structure is contacting a peripheral area    that is protectable from growth; and-   disposing a blocking structure on top of the frame structure,    wherein the blocking structure blocks growth of polycrystalline    diamond material.

The abovementioned method, wherein the polycrystalline diamond materialthat is growth is having similar purity as the single crystal diamond.

The abovementioned method, further comprising:

-   polishing a planar surface of the embedded single crystal diamond    structure.

The abovementioned method, wherein a thickness of the non-diamondsubstrate is more than 1 millimeter (mm).

The abovementioned method, wherein the single crystal diamond is one ofa plurality of single crystal diamonds disposed on the non-diamondsubstrate, and wherein the single crystal diamond joined with each otherthough polycrystalline diamond.

The abovementioned method, wherein the single crystal diamond is athin-film single crystal diamond.

In another embodiment, an embedded single crystal diamond structurecomprising:

-   a. a single crystal diamond; and-   b. a polycrystalline diamond surrounding at least one edge of the    single crystal diamond, wherein the single crystal diamond is    suspended between a thickness of the polycrystalline diamond.

The abovementioned embedded single crystal diamond is a thin-film singlecrystal diamond.

The abovementioned embedded single crystal diamond is a chemical vapordeposition (CVD) diamond.

The abovementioned embedded single crystal diamond structure, whereinthe single crystal diamond is having a thickness of less than 10 microns(µm).

The abovementioned embedded single crystal diamond structure, whereinthe single crystal diamond is having an area of 1.0 millimeter2 (mm2) x1.0 mm or larger.

The abovementioned embedded single crystal diamond structure, whereinthe thickness of polycrystalline diamond is having a thickness of morethan 3 mm.

The abovementioned embedded single crystal diamond structure, whereinthe single crystal diamond and the polycrystalline diamond are havingidentical purity.

The abovementioned embedded single crystal diamond structure, whereinthe single crystal diamond is one in a plurality of single crystaldiamonds, and wherein all of the plurality of single crystal diamondsare structurally held together using polycrystalline diamond.

In one embodiment, a method of growing an embedded single crystaldiamond structure is provided. The method includes a step to dispose asingle crystal diamond on a non-diamond substrate, wherein thenon-diamond substrate is larger than the single crystal diamond. Themethod further includes a step to mask a top portion of the singlecrystal diamond using a masking material. Finally, the method includes astep to grow polycrystalline diamond material surrounding the singlecrystal diamond in order to join the single crystal diamond to thepolycrystalline diamond using a chemical vapor deposition (CVD) growthmethod. The method forms an embedded single crystal diamond structureincludes a single crystal diamond and a polycrystalline diamond. Thepolycrystalline diamond surrounds the single crystal diamond, whereinthe single crystal diamond is suspended between the polycrystallinediamonds.

The abovementioned embedded single crystal diamond structure, whereinthe single crystal diamond is one in a plurality of single crystaldiamonds, and wherein all of the plurality of single crystal diamondsare structurally held together using polycrystalline diamond.

In some embodiment, a method of growing an embedded diamond structure isprovided. The method includes a step to dispose at least one singlecrystal diamond on a non-diamond substrate, wherein the non-diamondsubstrate is larger than the single crystal diamond. The method furtherincludes a step to mask a top portion of the single crystal diamondusing a masking material. Finally, the method includes a step to growpolycrystalline diamond material surrounding the single crystal diamondin order to join the single crystal diamond to the polycrystallinediamond using a chemical vapor deposition (CVD) growth method. Themethod forms an embedded single crystal diamond structure includes asingle crystal diamond and a polycrystalline diamond. Thepolycrystalline diamond surrounds the single crystal diamond, whereinthe single crystal diamond is suspended between the polycrystallinediamonds.

What is claimed is: 1-9. (canceled)
 10. An embedded single crystaldiamond structure comprising: a single crystal diamond; and apolycrystalline diamond surrounding at least a portion of one edge ofthe single crystal diamond, wherein thickness of polycrystalline diamondis more than a thickness of single crystal diamond, and wherein boundarybetween the single crystal diamond and the polycrystalline diamond has aRaman full-width half maxima (FWHM) ranging from 2 cm⁻¹ to 2.5 cm⁻¹. 11.The embedded single crystal diamond structure as defined in claim 10wherein the single crystal diamond has a thickness of 2 µm or less. 12.The embedded single crystal diamond structure as defined in claim 10,wherein the single crystal diamond is having a thickness of less than 10microns (µm).
 13. The embedded single crystal diamond structure asdefined in claim 12, wherein the single crystal diamond is having anarea of 1.0 mm x 1.0 mm or larger.
 14. The embedded single crystaldiamond structure as defined in claim 13, wherein the thickness ofpolycrystalline diamond is having a thickness of more than 3 mm.
 15. Theembedded single crystal diamond structure as defined in claim 14,wherein the single crystal diamond and the polycrystalline diamond arehaving identical purity that enables post-processing step.
 16. Theembedded single crystal diamond structure as defined in claim 10,wherein the single crystal diamond has a thickness of 20 µm or less.